Hall Effect Experiment, HEX-RM-150/ HEX-RM-150C

Product Description

We manufacture, export and supply Hall Effect Experiment, HEX-RM-150/ HEX-RM-150C in Roorkee, Uttarakhand, India.  

Introduction

When a current-carrying conductor is placed in a magnetic field perpendicular to the current direction, a voltage develops transverse to the current. This voltage was first observed in 1879 by Edwin Hall and the  effect is called Hall Effect.

The Hall effect has since led to a deeper understanding of the details of the conduction process. It can yield the density of the charge carriers as well as their sign. The hall voltage for p-carriers has opposite sign from that for n-carriers. Therefore if a semiconductor with p-type doping is gradually heated up, more and more electrons from its valence band will go to conduction band. As a result hall voltage would fall rapidly with temperature and even become zero or change sign. At the point of zero Hall Coefficient, it is possible to determine the ratio of mobilities b=m_e/m_h . The Hall coefficient inversion is a characteristic of only p-type semiconductors.

The set-up consists of following units:

1.Hall Probe (Ge: p-type), HPP-RM-33

• Ge single crystal with four spring type pressure contacts is mounted on a glass-epoxy strip. Leads are provided for connections with the current source and Hall voltage measuring devices.
• Oven
• It is a small oven which could be easily mounted over the crystal or removed if required.
• Temperature Sensor
• Cromel-Alumel thermocouple with its junction at a distance of 1mmfrom the crystal.
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• 2. Hall Probe (without sample), HPP-RM-33NS
  
• Same Hall Probe at HPP-33, except that it comes without sample, to enable the user to mount their own sample.
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• 3. Hall Probe (Ge Crystal), HPN-RM
• Ge single crystal with four spring-type pressure contacts is mounted on a sunmica-decorated bakelite strip. Four leads are provided for connections with measuring devices.
• Technical details
• Material : Ge single crystal n-type
• Resistivity : 8-10 .cm
• Contacts : Spring type (solid silver)
• Zero- Field potential : <1mV (adjustable)
• Hall Voltage : 25-35mV/10mA/KG
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• 4. Hall Probe (Si Crystal), HPSi-RM
• Si single crystal with four spring-type pressure contacts is mounted on a sunmica-decorated bakelite strip. Four leads are provided for connections with measuring devices.
• Technical details
• Material : Si single crystal n-type
• Resistivity : 14-15 .cm
• Contacts : Spring type (solid silver)
• Zero- Field potential : <1mV (adjustable)
• Hall Voltage : 25-35mV/10mA/KG
• This probe is very similar to HPN-RM.
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• 5. Hall Probe (without sample), HP10-RM
• Same Hall Probe at HPN-RM, except that it comes without sample, to enable the user to mount their own sample of 10x10mm size.
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• 6. Hall Probe (without sample), HP05-RM
• Same Hall Probe at HPN-RM, except that it comes without sample, to enable the user to mount their own sample of 5x5mm size.
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• 7. Hall Effect Set, DHE-RM-150
• (a) Digital Millivoltmeter
• Specifications
• Range : 1mV, 10mV, 100mV, 1V
• & 10V with 100% over-ranging.
• Resolution : 1 V
• Accuracy : 0.2% 1 digit
• Stability : Within 1 digit
• Input Impedance : >1000M
• (10M on 10V range)
• Display : 3 digit, 7 segment
• LED with autopolarity and
• decimal indication
• (b) Constant Current Power Supply
• Specifications
• Range : 0-20mA, 0-200mA
• Resolution : 10 A
• Accuracy : 0.25% of reading 1 digit
• Display : 3 digit, 7 segment LED with autopolarity and decimal indication
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• 8. Electromagnet, EMU-75T (Refer datasheet for specifications)
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• 9. Constant Current Power Supply, DPS-175-C2 (Refer datasheet for specifications)
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• 10. Digital Gaussmeter, DGM-202-C1 (Refer datasheet for specifications)
• Optional Attachments
• This model of Hall Effect Experiment may be connected to a computer for data logging purposes. Necessary hardware and software can be ordered with the system.
• The setup is complete in all respect