Hall Effect Experiment, HEX-RM-150/ HEX-RM-150C

Product Description

We manufacture, export and supply Hall Effect Experiment, HEX-RM-150/ HEX-RM-150C in Roorkee, Uttarakhand, India.  

Introduction

When a current-carrying conductor is placed in a magnetic field perpendicular to the current direction, a voltage develops transverse to the current. This voltage was first observed in 1879 by Edwin Hall and the  effect is called Hall Effect.

The Hall effect has since led to a deeper understanding of the details of the conduction process. It can yield the density of the charge carriers as well as their sign. The hall voltage for p-carriers has opposite sign from that for n-carriers. Therefore if a semiconductor with p-type doping is gradually heated up, more and more electrons from its valence band will go to conduction band. As a result hall voltage would fall rapidly with temperature and even become zero or change sign. At the point of zero Hall Coefficient, it is possible to determine the ratio of mobilities b=m_e/m_h . The Hall coefficient inversion is a characteristic of only p-type semiconductors.

The set-up consists of following units:

(i)   (a)  Hall Probe (Ge : p-type) with a small oven and a Thermocouple, HPP-RM-33

      (b)  Hall Probe (w/o Sample) with a small oven and a Thermocouple, HPP-RM-33NS

      (c)  Hall Probe (Ge Crystal - n type), HPN-RM

      (d)  Hall Probe (Ge Crystal - p type), HPP-RM

      (e) Hall Probe (Si Crystal - n type), HPSi-RM

      (f)  Hall Probe: Bismuth, HPBi-RM

      (g)  Hall Probe Mount (For 10mmx10mm sample), HP10-RM

      (h)  Hall Probe Mount (For 5mmx5mm sample), HP05-RM

(ii)  Hall Probe Multipurpose Stand, HPS “ 2pcs

(iii) Hall Effect Setup, DHE-RM-150

(iv) Electromagnet, Model EMU-75T

(v) Constant Current Power Supply, DPS-175-C2

(vi) Digital Gaussmeter, DGM-202-C1 (Optional: DGM-204-C2-Item no.10b)

(vii) Computer Aided Measurement Module, SES CAMM-2   (Optional- Extra)

Complete in all respect