Magnetoresistance Experiment System, MRX-01 Magnetoresistance Experiment System, MRX-01 Magnetoresistance Experiment System, MRX-01 Magnetoresistance Experiment System, MRX-01
Magnetoresistance Experiment System, MRX-01
Magnetoresistance Experiment System, MRX-01 Magnetoresistance Experiment System, MRX-01 Magnetoresistance Experiment System, MRX-01

Magnetoresistance Experiment System, MRX-01

Product Details:

  • Usage Laboratory Experiment
  • Application Laboratory Experiment
  • Color Grey
  • Weight 60 Kg Kilograms (kg)
  • Material Electronics
  • Display Type Digital
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Magnetoresistance Experiment System, MRX-01 Price And Quantity

  • 1 Set

Magnetoresistance Experiment System, MRX-01 Product Specifications

  • Digital
  • Laboratory Experiment
  • Laboratory Experiment
  • Electronics
  • Grey
  • 60 Kg Kilograms (kg)

Magnetoresistance Experiment System, MRX-01 Trade Information

  • Cash on Delivery (COD) Cheque Delivery Point (DP) Cash Against Delivery (CAD) Telegraphic Transfer (T/T) Cash in Advance (CID) Cash Advance (CA)
  • 100 Set Per Month
  • 1 Week
  • Contact us for information regarding our sample policy
  • Complete in all respect
  • Asia Australia Central America North America South America Eastern Europe Western Europe Middle East Africa
  • All India
  • ISO 9001: 2015 CE

Product Description

Magnetoresistance Experiment System, Mrx-01

We manufacture, export and supply Magnetoresistance Experiment System to our customers in Roorkee, Uttarakhand, India. It is noticed that the resistance of the sample changes when the magnetic field is turned on. The phenomenon, called magneto resistance, is due to the fact that the drift velocity of all carriers is not same. With the magnetic field on; the Hall voltage V = E t = v H y compensates exactly the Lorentz force for carriers with the average velocity; slower carriers will be over compensated and faster one under compensated, resulting in trajectories that are not along the applied field. This results in an effective decrease of the mean free path and hence an increase in resistivity.

Here the above referred symbols are defines as: v = drift velocity; E = applied electric field; t = thickness of the crystal; H = Magnetic field

DETAILS OF THE EXPERIMENTAL SET-UP

  • Four Probe Arrangement, FPA-MRX-02
  • Sample: Ge Crystal (n-type)
  • Hall Probe Multipurpose Stand, HPS
  • Magnetoresistance Setup, DMR-02
  • Electromagnet, EMU-50V
  • Constant Current Power Supply, DPS-50
  • Digital Gaussmeter, DGM-202

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