Dependence Of Hall Coefficient On Temperature, HEX-22

Product Description

We are distinguished manufacturer, supplier and exporter of Dependence Of Hall Coefficient On Temperature in Roorkee, Uttarakhand, India. Conductivity measurements in semiconductors cannot reveal whether one or both types of carriers are present, nor distinguish between them. However, this information can be obtained from Hall Effect measurements, which are a basic tool for the determination of mobilities. The effect was discovered by E.H. Hall in 1879. Consider a simple crystal mounted as in the Fig. 1, with a magnetic field H in the z direction perpendicular to contacts 1, 2 and 3, 4. If current is flowing through the crystal in the x direction (by application of a voltage Vx between contacts 1 and 2), a voltage will appear across contacts 3, 4. It is easy to calculate this (Hall) voltage if it is assumed that all carriers have the same drift velocity. We will do this in two steps : (a) by assuming that carriers of only one type are present, and (b) by assuming that carriers of both types are present.

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